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Debye Screening Length: Effects of Nanostructured Materials

Debye Screening Length: Effects of Nanostructured Materials

Paperback

Series: Springer Tracts in Modern Physics, Book 255

Technology & EngineeringPhysics

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ISBN10: 3319343505
ISBN13: 9783319343501
Publisher: Springer
Published: Aug 23 2016
Pages: 385
Weight: 1.29
Height: 0.86 Width: 6.10 Depth: 9.25
Language: English
Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors.- The DSL for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL For Ultra-Thin Films of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in the Presence of Quantizing Magnetic Field for III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in N-Channel Inversion Layers of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- The DSL in NIPI Structures of III-V, Ternary and Quaternary Semiconductors Under External Photo-Excitation.- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors.- The DSL in Quantum Wells of Non-Parabolic Semiconductors.- The DSL in NIPI Structures of Non-Parabolic Semiconductors.- The DSL in Inversion Layers of Non-Parabolic Semiconductors.- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors.- The DSL for III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL for Quantum Wells of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in the Presence of Quantizing Magnetic Field for III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in N-Channel Inversion Layers of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- The DSL in NIPI Structures of III-V, Ternary and Quaternary Semiconductors Under Intense Electric Field.- Conclusions and Future Research.

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