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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology

Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology

Erol, Ayse

Hardcover

Series: Springer Materials Science, Book 105

Technology & EngineeringPhysics

ISBN10: 3540745289
ISBN13: 9783540745280
Publisher: Springer Nature
Published: Jan 29 2008
Pages: 592
Weight: 2.16
Height: 1.04 Width: 6.26 Depth: 9.37
Language: English

A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors and Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.

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