• Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Stability of IGZO-based Thin-Film Transistor

Stability of IGZO-based Thin-Film Transistor

Paperback

Technology & Engineering

ISBN10: 3838399633
ISBN13: 9783838399638
Publisher: Lap Lambert Academic Pub
Published: Sep 7 2010
Pages: 152
Weight: 0.51
Height: 0.35 Width: 6.00 Depth: 9.00
Language: English
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 C and 300 C.

Also in

Technology & Engineering