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Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

Development, Design and Analysis of Type-II Hetero-Strained Nanosystem

Paperback

Technology & Engineering

ISBN10: 6200381585
ISBN13: 9786200381583
Publisher: LAP Lambert Academic Publishing
Published: Sep 29 2025
Pages: 180
Weight: 0.55
Height: 0.41 Width: 6.00 Depth: 9.00
Language: English
This book investigates the advancement and analysis of strained channel cylindrical gate-all-around (CGAA) FETs. The study explores a nano-scale design incorporating three ultrathin strained layers: two outer layers of strained silicon (s-Si) and a middle layer of strained silicon germanium (s-SiGe), forming a heterostructure-on-insulator (HOI) within the CGAA FET. These strained layers in the channel effectively confine quantum carriers, thereby enhancing carrier mobility and reducing threshold voltage roll-off.

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